Process voltage and temperature detection of the silicon chip die is accomplished by PVT Sensor, an IP. It offers special characteristics like temperature and voltage probes without requiring specialized analog current and voltage signals. For real-time sensor data communication, each voltage sensor node is connected to the central controller by a single-wire digital signal. Each node has a specific enable signal that may be used to enable or inhibit the operation for power management. Each probe includes a digital interface that connects to the central controller, which preserves the sensing operation with on-chip noise and improves accuracy.
compared to conventional PVT sensors, each sensor node can have an extremely flexible signal routing and node location.
Using two 12 bit digital I/O ports, IP features a parallel communication interface with a command and response protocol. Using a parallel communication connection, alarm signals may also be set up to notify users when low and high thresholds are crossed. The precision of the voltage and temperature probes on the sensor may be calibrated using trimming options.
10b Digital Temperature and Voltage Resolution
Easy integration and noise immunity
Ultra-low leakage power
Ultra-low active power
Configurable ALERT signals for temperature and voltage limits
-40degC to +125degC
Applications:
Temperature monitoring on SoC
Industrial Process control
Thermal protection
Die Temperature monitoring
MOS Process corner estimation
System performance enhancement
Deliverables:
Datasheet
GDS II
Characterization Report
Abstract View (LEF)
Integration and Customer
Benefits
One degree accurate
Thermal Sensor
Process monitoring
Voltage monitoring
