Production Proven, Complex Semiconductor IP Cores

Semiconductor IP Cores


T2M › SerDes › 112G Serdes PHY IP in 12nm

112G Serdes PHY IP in 12nm

Description

The 112G SerDes IP Core in 12nm provides high-performance serial connectivity designed for advanced networking, data center, and storage SoCs. Supporting both 112 Gbps PAM4 signaling and 56 Gbps NRZ modes, it offers a balance of performance, power efficiency, and area savings.
This SerDes integrates adaptive equalization, reflection cancellation, and robust CDR to enable long-reach operation over lossy channels, making it ideal for optical modules, backplane links, and chip-to-chip communication. Optimized for port density and low power consumption, it is silicon-proven on the 12nm FinFET process, ensuring a reliable production-ready solution.

Features

  • Multi-rate support: 1–56 Gbps (NRZ) and 56–112 Gbps (PAM4).
  • Long-reach capable with DFE, FFE, and adaptive equalization.
  • Integrated microcontroller for autonomous adaptation and configuration.
  • On-chip diagnostics: PRBS generators/checkers, eye stats, BER measurement, loopback modes.
  • Silicon proven in 12nm FinFET process technology.

Applications

  • Networking switches and routers
  • Hyperscale data center interconnects
  • Cloud and AI accelerators
  • Optical backplane & chip-to-chip communication

Benefits

  • Robust Performance: Reliable over challenging and reflective channels.
  • Energy Efficient: Optimized power for dense multi-lane deployments.
  • Integration Ready: Compact architecture suitable for large SoCs.
  • Validated & Proven: Silicon-proven in 12nm, ensuring faster time-to-market.

Deliverables

  • GDSII layout with LEF abstracts
  • Liberty timing/power models (.lib/.db)
  • Post-layout Verilog netlist & SDF
  • RTL/behavioral simulation models
  • Verification testbenches & scripts
  • Documentation: integration guide, user manual, and test guidelines