Production Proven, Complex Semiconductor IP Cores

Semiconductor IP Cores


T2M SerDes 112G Serdes PHY IP in 6nm

112G Serdes PHY IP in 6nm

Description

The 112G SerDes IP Core in 6nm FinFET technology enables ultra-high-speed serial connectivity for next-generation SoCs. Supporting both PAM4 signaling up to 112 Gbps per lane and NRZ modes up to 56 Gbps, this SerDes is tailored for long-reach and short-reach links across diverse environments such as data centers, networking switches, and cloud accelerators.
Its advanced DSP equalization, adaptive clock/data recovery, and reflection cancellation deliver robust performance even over lossy channels. With a low-power, compact architecture, this PHY IP is optimized for high port density, ensuring scalability for large-scale integration.

Features

  • Speed Flexibility: 1–56 Gbps (NRZ) and 56–112 Gbps (PAM4).
  • Channel Robustness: Long-reach support with adaptive EQ, DFE, and FFE.
  • Integrated MCU: Self-startup, link adaptation, and autonomous operation.
  • Diagnostics & Testability: PRBS generators/checkers, eye monitoring, BER estimation, and loopback modes.
  • Process Node: Proven in 6nm FinFET with superior power-performance efficiency.

Applications

  • High-bandwidth data center interconnects
  • Cloud servers and hyperscale networking
  • AI/ML SoCs requiring low-latency serial links
  • Chip-to-chip and backplane communication

Benefits

  • High Performance: Reliable operation across lossy and reflective channels.
  • Low Power, Compact Area: Optimized for multi-lane, high-density designs.
  • Scalable Integration: Configurable for various reach and rate requirements.
  • Streamlined Deployment: Rich test/debug tools simplify validation.

Deliverables

  • GDSII layout database with abstracts
  • Verilog netlists, STA scripts, and timing libraries (.lib/.db)
  • Behavioral simulation models and testbenches
  • Complete documentation: integration notes, user guide, and test guidelines